YVO4

YVO4

YVO4



Details


Features

We supplies Nd, Yb and no doped YVO4 crystals which is the most efficient and excellent laser crystal applied most suitably to build stable and cost effective diode- pumped solid-state lasers as well as some low power devices such as handheld pointers and other compact lasers.
 

Specifications 

Dopant Concentration Tolerance-----------------------0.1%
Parallelism -------------------------------------------------<10 arc seconds
Perpendicularity ------------------------------------------<5 arc minutes
Chamfer----------------------------------------------------0.1mm @45°
Clear Aperture---------------------------------------------95%
Surface Quality--------------------------------------------10/5
Surface Flatness-------------------------------------------20/10 or better
Wavefront Distortion--------------------------------------λ/8@633nm
                                                                                     λ/8@633nm
Damage Threshhold---------------------------------------over 15J/CM2 TEM00, 10NS, 10HZ 


Capabilities

1. Nd dopant concentration between 0.15 to 3.0mol%; 
2. Rod sizes from 1mm to 15mm in diameter and from 0.02mm to 20mm in length; 
3. Large rod and slab dimensions and non-standard dopant concentrations are
    available upon request;
4. AR, HR and HT coating are available upon request; 
5. Orientation of rod axis to crystal a-axis or c-axis within 2 degrees.









Physical and Optical Properties 
Atomic Density (Nd 1.0%)

~1.37x1020 atomics/cm3

Crystal Structure

Zircon Tetragonal, space group D4h- 14/amd, a=b=7.12A; C=6.29A

Density

4.22 g/cm3

Mohs Hardness

Glass-like,~5

Thermal Expansion Coefficient

a α=4.43*10-6/K,a c=11.37x10-6/K

Thermal Conductivity Coefficient

|| c:5.23 W/m/K;丄C:5.10 W/m/K

Lasing Wavelengths

914nm,1064nm,1342nm

Crystal Class

positive uniaxial, n°=na=nb,ne=nc
n°=1.9573, ne=2.1652, @ 1064nm
n°=1.9721, ne=2.1858, @ 808nm
n°=2.0210, ne=2.2560, @ 532nm

Thermal Optional Coefficient

dn°/dT =8.5x10-6/K,dne/dT=3.0x10-6/K

Stimulated Emission Cross-Section

25.0x10-19cm2,@ 1064nm

Fluorescent Lifetime

90μs @ 808nm

Absorption Coefficient

31.4 cm-1 @ 808nm

Absorption Length

0.32mm @ 808nm

Intrinsic Loss

Less 0.1% cm-1 ,@1064nm

Gain Bandwidth

0.96 nm(257 GHz)@ 1064nm

Polarized Laser Emission

parallel to optics axis(c-axis)

>Diode Pumped Optical to Optical Efficiency π polarization

>60%

Sellmeier Equation( For pure YVO4 crystals)

n°2=3.77834+0.069736/(λ2 – 0.04724) – 0.0108133λ2
n°2=4.59905+0.110534/(λ2 – 0.04813) – 0.0122676 λ2

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